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| Preliminary Data Sheet PD-20491 rev. A 04/01 UFB200FA20 Ultrafast Soft Recovery Diode Features * * * * Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly VR = 200V VF(typ.) = 0.92V IF(AV) = 240A Description The dual diode series configuration (UFB200FA20) is used for output rectification or frewheeling/ clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, HF welders, motor control and inverters. Absolute Maximum Ratings Parameters VR IF IFSM IFRM V ISOL TJ, TSTG Cathode-to-Anode Voltage Continuous Forward Current, TC = 90C Single Pulse Forward Current, TC = 25C Maximum Repetitive Forward Current Max. Power Dissipation, TC = 80C Operating Junction and Storage Temperatures Per Leg Per Leg Per Leg Per Module Max 200 120 1700 260 280 2500 - 55 to 150 Units V A W V C RMS Isolation Voltage, Any Terminal to Case, t = 1 min Case Styles UFB200FA20 1 4 SOT-227 www.irf.com 2 3 1 UFB200FA20 Preliminary Data Sheet PD-20491 rev. A 04/01 Electrical Characteristics @ TJ = 25C (unless otherwise specified) per diode Parameters VBR VFM Cathode Anode Breakdown Voltage Forward Voltage Min Typ Max Units Test Conditions 200 180 1.1 0.95 50 2 50 V V V A mA pF IR = 100A IF = 120A IF = 120A, TJ = 150C VR = VR Rated TJ = 150C, VR = 0.8 x VR Rated VR = 200V IRM Reverse Leakage Current - CT Junction Capacitance - Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified) per diode Parameters trr Reverse Recovery Time Min Typ Max Units Test Conditions - 34 58 4.5 9.0 87 300 45 - ns IF = 1.0A, diF/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C IF = 150A VR = 160V diF /dt = 200A/s IRRM Peak Recovery Current - A TJ = 25C TJ = 125C Qrr Reverse Recovery Charge - nC TJ = 25C TJ = 125C Thermal - Mechanical Characteristics Parameters RthJC RthCS Wt T Junction to Case, Single Leg Conducting Both Leg Conducting Case to Heat Sink, Flat, Greased Surface Weight Mounting Torque 0.05 30 1.3 g (N*m) Min Typ Max 0.5 0.25 Units C/W K/W 2 www.irf.com UFB200FA20 Preliminary Data Sheet PD-20491 rev. A 04/01 1000 1000 100 10 1 0.1 0.01 0.001 0 50 100 150 200 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage T J = 175C 125C Reverse Current - I R (A) 25C Instantaneous Forward Current - I F (A) 100 T J = 150C T J = 25C 10000 Junction Capacitance - C T (pF) 10 T J = 25C 1000 1 0.2 100 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (per diode) 1 Thermal Impedance Z thJC (C/W) Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage PDM 0.1 t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (per diode) www.irf.com 3 UFB200FA20 Preliminary Data Sheet PD-20491 rev. A 04/01 150 Allowable Case Temperature (C) Average Power Loss ( Watts ) 150 120 RMS Limit 140 130 120 110 100 90 Square wave (D = 0.50) Rated Vr applied DC 90 60 30 0 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 80 see note (3) 70 0 20 40 60 80 100 120 140 160 Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (per leg) 0 20 40 60 80 100 120 140 160 Average Forward Current - I F(AV) (A) Fig. 6 - Forward Power Loss Characteristics (per leg) 70 IF = 150A IF = 75A 900 800 700 Vr = 160V Tj = 125C Tj = 25C 60 50 Qrr ( nC ) trr ( ns ) 600 500 400 300 200 IF = 150A IF = 75A 40 30 20 Vr = 160V Tj = 125C Tj = 25C 100 1000 0 100 10 100 di F /dt (A/s ) di F /dt (A/s ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com UFB200FA20 Preliminary Data Sheet PD-20491 rev. A 04/01 3 IF trr ta tb 4 VR = 200V 0 2 Q rr I RRM 0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 1 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 di f /dt 4. Qrr - Area under curve defined by t rr and IRRM Q rr = t rr x I 2 RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 1 - Reverse Recovery Parameter Test Circuit Fig. 2 - Reverse Recovery Waveform and Definitions SOT-227 Package Details LEAD ASSIGNMENTS Notes: 1. Dimensioning & tolerancing per ANSI Y14.5M-1982. 2. Controlling dimension: millimeter. 3. Dimensions are shown in millimeters (inches). FRED www.irf.com 5 UFB200FA20 Preliminary Data Sheet PD-20491 rev. A 04/01 SOT-227 Package Details Tube QUANTITIES PER TUBE IS 10 M4 SCREW AND WASHER INCLUDED Ordering Information Table Device Code UF 1 B 2 200 3 F 4 A 5 20 6 7 1 2 3 4 5 6 7 - ULTRAFAST RECTIFIER Ultrafst Pt diffused Current Rating Circuit Configuration Package Indicator Voltage Rating Special Options (200 = 200A) (2 separate Diodes, parallel pin-out) (SOT-227 Standard Isolated Base) (20 = 200V) Empty = No special Option LC = n.a. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 04/01 6 www.irf.com |
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